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Modeling of integrated erbium-doped waveguide amplifiers with overlapping factors methods

Autor
Vallés, J. A.; Lazaro, J.A.; Rebolledo, M. A.
Tipus d'activitat
Article en revista
Revista
IEEE journal of quantum electronics
Data de publicació
1996-09
Volum
32
Número
9
Pàgina inicial
1685
Pàgina final
1694
DOI
https://doi.org/10.1109/3.535375 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/112614 Obrir en finestra nova
URL
http://ieeexplore.ieee.org/document/535375/ Obrir en finestra nova
Resum
An analysis of the applicability of overlapping factors methods to the modeling of integrated erbium-doped waveguide amplifiers is presented. These methods offer as main advantage a considerable seduction in computation time without a decrease in their effective accuracy. We propose an extension of previous overlapping factors methods in order to model highly erbium-doped waveguide amplifiers. New sets of parameters related to the relevant upconversion and cross-relaxation mechanisms are introdu...
Citació
Vallés, J. A., Lazaro, J.A., Rebolledo, M. A. Modeling of integrated erbium-doped waveguide amplifiers with overlapping factors methods. "IEEE journal of quantum electronics", Setembre 1996, vol. 32, núm. 9, p. 1685-1694.
Paraules clau
Integrated Optical Circuits
Grup de recerca
GCO - Grup de Comunicacions Òptiques

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