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Localization and electrical characterization of interconnect open defects

Autor
Rodriguez-Montanes, R.; Arumi, D.; Figueras, J.; Beverloo, W.; de Vries, D.; Eichenberger, S.; Volf, P.
Tipus d'activitat
Article en revista
Revista
IEEE transactions on semiconductor manufacturing
Data de publicació
2010-02
Volum
23
Número
1
Pàgina inicial
65
Pàgina final
76
DOI
https://doi.org/10.1109/TSM.2009.2039187 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/7803 Obrir en finestra nova
URL
http://upcommons.upc.edu/e-prints/bitstream/2117/7803/1/getPDF.pdf Obrir en finestra nova
Resum
A technique for extracting the electrical and topological parameters of open defects in process monitor lines is presented. The procedure is based on frequency-domain measurements performed at both end points of the line. The location as well as the resistive value of the open defect are derived from attenuation and phase shift measurements. The characteristic defect-free impedance of the line and its propagation constant are considered to be unknowns, and their values are also derived from the ...
Citació
Rodríguez, R. [et al.]. Localization and electrical characterization of interconnect open defects. "IEEE transactions on semiconductor manufacturing", Febrer 2010, vol. 23, núm. 1, p. 65-76.
Grup de recerca
CRnE - Centre de Recerca en Ciència i Enginyeria Multiescala de Barcelona
QINE - Disseny de Baix Consum, Test, Verificació i Circuits Integrats de Seguretat

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