This paper presents a SiC Schottky diode model including static, dynamic and thermal features implemented as separate parameterized blocks constructed from SPICE Analog Behavioral Modeling (ABM) controlled sources. The parameters for each block are easy to extract, even from readily available diode data sheet information. The model complexity is low thus allowing reasonably long simulation times to cope with the rather slow self heating process and yet accurate enough for practical purposes.
Masana, F. SiC Schottky diode electrothermal macromodel. A: Mixed Design of Integrated Circuits and Systems. "MIXDES". Wroslaw: 2010, p. 371-374.