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Analytical modelling of 200 GHz SiGe HBT high-frequency noise parameters

Autor
Lopez-Gonzalez, Juan M.
Tipus d'activitat
Article en revista
Revista
Semiconductor science and technology
Data de publicació
2010-10-01
DOI
https://doi.org/10.1088/0268-1242/25/10/105011 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/9021 Obrir en finestra nova
Resum
This paper presents an analytical model for high-frequency noise of high-speed SiGe heterojunction bipolar transistors (HBTs). The model allows circuit level noise parameters to be obtained: the minimum noise figure, the noise resistance and the optimum admittance for different bias and frequencies up to 64 GHz, including the quasi-saturation effect. The noise parameters are determined directly from y-parameters. The analytical model is verified through comparison with TCAD simulation results of...
Citació
Lopez, J. Analytical modelling of 200 GHz SiGe HBT high-frequency noise parameters. "Semiconductor science and technology", 01 Octubre 2010.
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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