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IEEE transactions on electron devices

Total activitats: 19
Títol addicional
IEEE Xplore
ISSN
0018-9383 Obrir en finestra nova
Publicació / Producció
New York, NY : Antennas and Propagation Society of the Institute of Electrical and Electronics Engineers, 1988-
URL
http://ieeexplore.ieee.org/servlet/opac?punumber=16 Obrir en finestra nova

Producció científica

1 a 19 de 19 resultats
 
  • Author’s reply to “Comments on ‘optimization of a compact I–V model for graphene FETs: extending parameter scalability for circuit design exploration’ ” S. Frégonèse and T. Zimmer

     Iannazzo, M.; Lemme, M.; Alarcon, E.
    IEEE transactions on electron devices
    Vol. 63, num. 5, p. 2226
    DOI: 10.1109/TED.2016.2546439
    Data de publicació: 2016-05
    Article en revista
  • Optimization of a compact I-V model for graphene FETs : extending parameter scalability for circuit design exploration

     Iannazzo, M.; Lo Muzzo, V.; Rodriguez, S.; Pandey, H.; Rusu, A.; Lemme, M.; Alarcon, E.
    IEEE transactions on electron devices
    Vol. 62, num. 11, p. 3870-3875
    DOI: 10.1109/TED.2015.2479036
    Data de publicació: 2015-11-01
    Article en revista
  • Measurements of process variability in 40-nm regular and nonregular layouts

     Mauricio, J.; Moll, F.; Gomez, S.
    IEEE transactions on electron devices
    Vol. 61, num. 2, p. 365-371
    DOI: 10.1109/TED.2013.2294742
    Data de publicació: 2014-02-01
    Article en revista
  • High-density capacitor devices based on macroporous silicon and metal electroplating

     Vega, D.; Reina, J.; Pavón, R.; Rodriguez, A.
    IEEE transactions on electron devices
    Vol. 61, num. 1, p. 116-122
    DOI: 10.1109/TED.2013.2290065
    Data de publicació: 2014-01
    Article en revista
  • Comparison of SRAM cells for 10-nm SOI FinFETs under process and environmental variations

     Jaksic, Z.; Canal, R.
    IEEE transactions on electron devices
    Vol. 60, num. 1, p. 49-55
    DOI: 10.1109/TED.2012.2226095
    Data de publicació: 2012-12
    Article en revista
  • Novel Electronic Devices in Macroporous Silicon: Design of FET Transistors for Power Applications

     Rodriguez, A.; Vega, D.; Najar, R.; Pina, M.
    IEEE transactions on electron devices
    Vol. 58, num. 9, p. 3065-3071
    DOI: 10.1109/TED.2011.2159508
    Data de publicació: 2011-07
    Article en revista
  • Understanding and optimization of Hot-Carrier reliability in germanium-on-silicon pMOSFETs

     Maji, D.; Crupi, F.; Amat, Esteve; Simoen, E.; De Jaeger, B.; Brunco, D.; Manoj, C.; Ramgopal Rao, V.; Magnone, P.; Giusi, G.; Pace, C.; Pantisano, L.; Mitard, J.; Rodríguez, R.; Nafría, M.
    IEEE transactions on electron devices
    Vol. 56, num. 5, p. 1063-1069
    DOI: 10.1109/TED.2009.2015854
    Data de publicació: 2009
    Article en revista
  • Channel hot-carrier degradation and bias temperature instabilities in CMOS inverters

     Martin, J.; Gerardin, S.; Amat, Esteve; Rodríguez, R.; Nafría, M.; Aymerich , X.; Paccagnella, A.; Ghidini, G.
    IEEE transactions on electron devices
    Vol. 56, num. 9, p. 2155-2159
    DOI: 10.1109/TED.2009.2026206
    Data de publicació: 2009
    Article en revista
  • Effects of the localization of the charge in nanocrystal memory cells

     Gasperini, A.; Amat, Esteve; Porti, M.; Martin, J.; Nafría, M.; Aymerich , X.; Paccagnella, A.
    IEEE transactions on electron devices
    Vol. 56, num. 5, p. 1063-1069
    DOI: 10.1109/TED.2009.2028404
    Data de publicació: 2009
    Article en revista
  • Gate Oxide Wear Out and Breakdown Effects on the Performance of Analog and Digital Circuits

     Fernandez-Garcia, R.; Martin, J.; Rodríguez, R.; Nafría, M.; Aymerich , X.
    IEEE transactions on electron devices
    Vol. 55, num. 4, p. 997-1004
    Data de publicació: 2008-04
    Article en revista
  • A COMPARISON BETWEEN MONTE CARLO AND EXTENDED DRIFT-DIFFUSION MODELS FOR ABRUPT InP/InGaAs HBTs

     Garcies, P.; Lopez-Gonzalez, Juan M.; Prat, L.
    IEEE transactions on electron devices
    Vol. 48, num. 6, p. 1045-1053
    Data de publicació: 2001-06
    Article en revista
  • Generator of ultrashort pulses for time division multiplexing

     Dellunde, J.; Torrent, M.C.; Sancho, J M; Mirasso, C.R
    IEEE transactions on electron devices
    Vol. 45, num. 10, p. 2122-2130
    Data de publicació: 1998-10
    Article en revista
  • Distribution of recombination currents in the space charge of heterostructure bipolar devices

     Pallares, J.; Marsal, L.; Correig, X.; Calderer, J.; Alcubilla, R.
    IEEE transactions on electron devices
    Vol. 45, num. 1, p. 54-61
    Data de publicació: 1998-01
    Article en revista
  • The importance of bandgap narrowing distribution between the conduction and valence bands in abrupt hbt's

     Lopez-Gonzalez, Juan M.; Prat, L.
    IEEE transactions on electron devices
    Vol. 44, num. 7, p. 1046-1051
    Data de publicació: 1997-07
    Article en revista
  • Degradation and Breakdown of thin silicon dioxide films under dynamic electrical stress

     Nafría, M.; Suñé, J.; Yelamos, D.; Aymerich, X.
    IEEE transactions on electron devices
    Vol. 43, num. 12, p. 2215-2226
    Data de publicació: 1996-12
    Article en revista
  • A compact charge sharing ratio for the emitter delay time in polysilicon emitter bipolar transistors

     Castañer, L.; Sureda, S.; Alcubilla, R.; Bardes, D.
    IEEE transactions on electron devices
    Vol. 41, num. 3, p. 454-455
    Data de publicació: 1994-03
    Article en revista
  • Model for the anomalous off-current of polysilicon thin film transistors and diodes

     Rodriguez, A.; Moreno, E.; Pattyn, H.; Nijs, J.; Mertens, R.
    IEEE transactions on electron devices
    Vol. 40, num. 5, p. 938-943
    Data de publicació: 1993-05
    Article en revista
  • Vertical scalability of forward delay times in bipolar transistors

     Castañer, L.
    IEEE transactions on electron devices
    Vol. 0, num. 36, p. 1841-1844
    Data de publicació: 1989-10
    Article en revista
  • The asymptotes of the base current in bipolar devices

     Castañer, L.; Ashburn, P.; Wolstenholme, P.; Prat, L.
    IEEE transactions on electron devices
    Vol. 35, num. 11, p. 1902-1908
    Data de publicació: 1988-01
    Article en revista