Multilayer structures are of great interest in the fabrication of single mode devices for Integrated Optics. this work it is shown that a multilayer structure allows not only single-mode behaviour but it enhaces the non-reci procity of the quide.
Two sets of thin film sputtered In2O3+SnO2 samples, one prepared in argon atmosphere with oxigen, and the other without, at various temperatures between 100°C and 250°C, have been studied by measuring their Farday rotation from optical to infrared frequencies, as well as their optical transmission spectra. The effect of the different treatments on the carrier densities and mobilities, show values that grow with deposition temperature. This can be attributed to an increase in the number of oxygen vacancies. On the other hand, the presence of O2 in the atmosphere during deposition, leads to smaller values at the same temperatures, compared to those obtained in samples prepared in atmosphere without oxygen, seemingly as a result of the filling of the vacancies.
The electromagnetic coupling between a gaussian beam and whisker structures such as those found in some kinds of non-linear devices used at infrared frequencies is investigated. Calculations show the potential improvement of the electromagnetic coupling coefficient by the proper choice of the focusing angle of the beam and the use of corner reflectors, giving quantitative support to these techniques which have been used for long time.