Carregant...
Carregant...

Vés al contingut (premeu Retorn)

International journal of numerical modeling. Electronic networks devices and fields

Total activitats: 12
Títol addicional
Wiley Online Library e-journals
ISSN
0894-3370 Obrir en finestra nova
Publicació / Producció
New York : John Wiley & Sons, 199?-
URL
http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1099-1204 Obrir en finestra nova

Producció científica

1 a 12 de 12 resultats
 
  • Modeling technique of the conducted emission of integrated circuit under different temperatures  Accés obert

     Berbel, N.; Fernandez-Garcia, R.; Gil, I.
    International journal of numerical modeling. Electronic networks devices and fields
    Vol. 29, p. 291-300
    DOI: 10.1002/jnm.2076
    Data de publicació: 2016-03-01
    Article en revista
    Accés al text complet
  • Asymmetric modelling and control of an electronic throttle  Accés obert

     Pujol-Vazquez, G.; Vidal, Y.; Acho, L.; Vargas, A.
    International journal of numerical modeling. Electronic networks devices and fields
    Vol. 29, num. 2, p. 192-204
    DOI: 10.1002/jnm.2063
    Data de publicació: 2016-03
    Article en revista
    Accés al text complet
  • Set-valued estimation of switching linear system: an application to an automotive throttle valve  Accés obert

     Podivilova, E.; Vargas, A.; Shiryaev, V.; Acho, L.
    International journal of numerical modeling. Electronic networks devices and fields
    DOI: 10.1002/jnm.2136
    Data de publicació: 2015
    Article en revista
    Accés al text complet
  • Modeling tunable band-pass filters based on RF-MEMS metamaterials  Accés obert

     Morata, M.; Gil, I.; Fernandez-Garcia, R.
    International journal of numerical modeling. Electronic networks devices and fields
    Vol. 24, num. 6, p. 583-589
    DOI: 10.1002/jnm.808
    Data de publicació: 2011-02-01
    Article en revista
    Accés al text complet
  • Thermal modelling of the chip for the REMS wind sensor

     Kowalski, L.; Ricart, J.; Jimenez, V.; Dominguez, M.; Castañer, L.
    International journal of numerical modeling. Electronic networks devices and fields
    Vol. 23, num. 48, p. 340-353
    DOI: 10.1002/jnm.v23:4/5
    Data de publicació: 2010-07
    Article en revista
  • Simulation of the hot-carrier degradation in short channel transistors with high-K dielectric

     Amat, Esteve; Kauerauf, T.; Degraeve, R.; Rodríguez, R.; Nafría, M.; Aymerich , X.; Groeseneken, G.
    International journal of numerical modeling. Electronic networks devices and fields
    Vol. 23, num. 4-5, p. 315-323
    DOI: 10.1002/jnm.750
    Data de publicació: 2010
    Article en revista
  • DC and small-signal comparison of horizontal emitter designs of InGaP/GaAs heterojunction bipolar transistors

     Lopez-Gonzalez, Juan M.
    International journal of numerical modeling. Electronic networks devices and fields
    num. 22, p. 411-421
    Data de publicació: 2009-04-16
    Article en revista
  • On the transmission properties of left-handed microstrip lines implemented by complementary split rings resonators

     Gil, I.; Bonache , J.; Garcia-Garcia, J.; Martín, F.
    International journal of numerical modeling. Electronic networks devices and fields
    Vol. 19, num. 2, p. 87-103
    Data de publicació: 2006-03
    Article en revista
  • A model for abrupt double heterojunction bipolar transistors

     Garcia-Loureiro, A.; Lopez-Gonzalez, Juan M.
    International journal of numerical modeling. Electronic networks devices and fields
    Vol. 17, num. 1, p. 29-42
    Data de publicació: 2004-01
    Article en revista
  • Monte Carlo modelling of abrupt InP/InGaAs HBTs

     Garcies, P.; Lopez-Gonzalez, Juan M.; Prat, L.
    International journal of numerical modeling. Electronic networks devices and fields
    Vol. 16, num. 4, p. 319-335
    Data de publicació: 2003-05
    Article en revista
  • A parallel 3d semiconductor device simulator for gradual heterojunction bipolar transistors

     Loureiro, A.; Lopez-Gonzalez, Juan M.
    International journal of numerical modeling. Electronic networks devices and fields
    Vol. 16, p. 53-66
    Data de publicació: 2003-01
    Article en revista
  • Numerical analysis of abrupt heterojunction bipolar transistors

     Garcia-Loureiro, A.; Lopez-Gonzalez, Juan M.; Tomas, F.; LLUIS, P.; Prat, L.
    International journal of numerical modeling. Electronic networks devices and fields
    Vol. 11, num. 0, p. 221-229
    Data de publicació: 1998-07
    Article en revista