We describe fundamental energy dissipation in dynamic nanoscale processes in terms of the localization of the interactions. In this respect, the areal density of the energy dissipated and the effective area of interaction in which each process occurs are calculated for four elementary dissipative processes. It is the ratio between these two, which we term M that provides information about how localized the interactions are. We show that neither the phase lag, nor the magnitude of the energy dissipated alone provide information about energy localization but M has to be considered instead.
Roa, J.J.; Capdevila, X.G.; Martínez, M.; Espiell, F.; Segarra, M. Nanotechnology Vol. 18, num. 38, p. 385701/1-385701/6 DOI: 10.1088/0957-4484/18/38/385701 Data de publicació: 2007-09-26 Article en revista
We present a semiclassical kinetic theory for the electronic transport and noise properties of ballistic n(+)-n-n(+) semiconductor nanodiodes. The theory is based on an exact solution of the Vlasov-Langevin kinetic equation self-consistently coupled to the Poisson equation, and takes into account the Pauli exclusion principle. The current-voltage characteristics calculated from the present theory perfectly agree with existing theoretical predictions. Concerning the noise properties, the theory offers the possibility of computing the current noise under all current regimes, thus overcoming the inherent limitations of existing theories.