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Third harmonic generation at 223 nm in the metallic regime of GaP

Autor
Roppo, V.; Foreman, J.; Akozbek, N.; Vincenti, M.; Scalora, M.
Tipus d'activitat
Article en revista
Revista
Applied physics letters
Data de publicació
2011-03-14
Volum
98
Número
11
Pàgina inicial
1
Pàgina final
3
DOI
https://doi.org/10.1063/1.3565240 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/13277 Obrir en finestra nova
URL
http://apl.aip.org/resource/1/applab/v98/i11/p111105_s1 Obrir en finestra nova
Resum
We demonstrate second and third harmonic generation from a GaP substrate 500 μm thick. The second harmonic field is tuned at the absorption resonance at 335 nm, and the third harmonic signal is tuned at 223 nm, in a range where the dielectric function is negative. These results show that a phase locking mechanism that triggers transparency at the harmonic wavelengths persists regardless of the dispersive properties of the medium, and that the fields propagate hundreds of microns without being ...
Citació
Roppo, V. [et al.]. Third harmonic generation at 223 nm in the metallic regime of GaP. "Applied physics letters", 14 Març 2011, vol. 98, núm. 11, p. 1-3.
Grup de recerca
DONLL - Dinàmica no Lineal, Òptica no Lineal i Làsers

Participants

  • Roppo, Vito  (autor)
  • Foreman, John V.  (autor)
  • Akozbek, N  (autor)
  • Vincenti, M. A.  (autor)
  • Scalora, M.  (autor)

Arxius