Carregant...
Carregant...

Vés al contingut (premeu Retorn)

Novel Electronic Devices in Macroporous Silicon: Design of FET Transistors for Power Applications

Autor
Rodriguez, A.; Vega, D.; Najar, R.; Pina, M.
Tipus d'activitat
Article en revista
Revista
IEEE transactions on electron devices
Data de publicació
2011-07
Volum
58
Número
9
Pàgina inicial
3065
Pàgina final
3071
DOI
https://doi.org/10.1109/TED.2011.2159508 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/13318 Obrir en finestra nova
URL
http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5959197&tag=1 Obrir en finestra nova
Resum
In this paper, we study the application of macroporous silicon (MpSi) to the fabrication of transistors: Four different FET transistor structures are proposed using MpSi as the base material. These devices have been studied by simulation, and their characteristics are shown herein. The proposed structures include JFET, MOSFET, and trio de-like devices; in this study, we have considered both vertical and horizontal structures. For the vertical case, the proposed devices use the MpSi tubes to crea...
Citació
Rodriguez, A. [et al.]. Novel Electronic Devices in Macroporous Silicon: Design of FET Transistors for Power Applications. "IEEE transactions on electron devices", Juliol 2011, vol. 58, núm. 9, p. 3065-3071.
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

Participants

  • Rodriguez Martinez, Angel  (autor)
  • Vega Bru, Didac  (autor)
  • Najar Molina, Raúl  (autor)
  • Pina Isitia, María Pilar  (autor)