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A 16-kV HBM RF ESD Protection Codesign for a 1-mW CMOS Direct Conversion Receiver Operating in the 2.4-GHz ISM Band

Autor
Gonzalez, J.; Solar, H.; Adin, I.; Mateo, D.; Berenguer, R.
Tipus d'activitat
Article en revista
Revista
IEEE transactions on microwave theory and techniques
Data de publicació
2011-09
Volum
59
Número
9
Pàgina inicial
2318
Pàgina final
2330
DOI
https://doi.org/10.1109/TMTT.2011.2160078 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/14366 Obrir en finestra nova
URL
http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=05953539 Obrir en finestra nova
Resum
A decreasing-sized π -model electrostatic discharge (ESD) protection structure is presented and applied to protect against ESD stresses at the RF input pad of an ultra-low power CMOS front-end operating in the 2.4-GHz industrial-scientific-medical band. The proposed ESD protection structure is composed of a pair of ESD devices located near the RF pad, another pair close to the core circuit, and a high-quality integrated inductor connecting these two pairs. This structure can sustain a human bod...
Citació
González, J. [et al.]. A 16-kV HBM RF ESD Protection Codesign for a 1-mW CMOS Direct Conversion Receiver Operating in the 2.4-GHz ISM Band. "IEEE transactions on microwave theory and techniques", Setembre 2011, vol. 59, núm. 9, p. 2318-2330.
Grup de recerca
HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions

Participants

  • Gonzalez Jimenez, Jose Luis  (autor)
  • Solar, H.  (autor)
  • Adin, Iñigo  (autor)
  • Mateo Peña, Diego Cesar  (autor)
  • Berenguer, Roc  (autor)