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Stationary states and phase diagram for a model of the Gunn effect under realistic boundary conditions

Autor
Gomila, G.; Rubí, J. M.; Rodriguez Cantalapiedra, I.; Bonilla, L.
Tipus d'activitat
Article en revista
Revista
Physical review E, statistical physics, plasmas, fluids, and related interdisciplinary topics
Data de publicació
1997-08
Volum
56
Número
2
Pàgina inicial
1490
Pàgina final
1499
DOI
https://doi.org/10.1103/PhysRevE.56.1490 Obrir en finestra nova
Repositori
https://journals.aps.org/pre/abstract/10.1103/PhysRevE.56.1490 Obrir en finestra nova
Resum
A general formulation of boundary conditions for semiconductor-metal contacts follows from a phenomenological procedure sketched here. The resulting boundary conditions, which incorporate only physically well-defined parameters, are used to study the classical unipolar drift-diffusion model for the Gunn effect. The analysis of its stationary solutions reveals the presence of bistability and hysteresis for a certain range of contact parameters. Several types of Gunn effect are predicted to occur ...
Paraules clau
Extrinsic Semiconductors, Finite Samples, Gaas, Instability, Stability, Contacts, Waves
Grup de recerca
BIOCOM-SC - Grup de Biologia Computacional i Sistemes Complexos

Participants