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Thin film transistors obtained by hot wire CVD

Autor
Puigdollers, J.; Orpella, A.; Dosev, D.; Voz, C.; Peiró, D.; Pallarés, J.; Marsal, L.; Bertomeu, J.; Andreu Batallé, Jordi; Alcubilla, R.
Tipus d'activitat
Article en revista
Revista
Journal of non-crystalline solids
Data de publicació
2000-05
Volum
266
Número
269
Pàgina inicial
1304
Pàgina final
1309
DOI
https://doi.org/10.1016/S0022-3093(99)00942-4 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/112402 Obrir en finestra nova
URL
http://www.sciencedirect.com/science/article/pii/S0022309399009424 Obrir en finestra nova
Resum
Hydrogenated microcrystalline silicon films obtained at low temperature (150–280°C) by hot wire chemical vapour deposition at two different process pressures were measured by Raman spectroscopy, X-ray diffraction (XRD) spectroscopy and photothermal deflection spectroscopy (PDS). A crystalline fraction >90% with a subgap optical absortion 10 cm-1 at 0.8 eV were obtained in films deposited at growth rates >0.8 nm/s. These films were incorporated in n-channel thin film transistors and their elec...
Citació
Puigdollers, J., Orpella, A., Dosev, D., Voz, C., Peiró, D., Pallarés, J., Marsal, L., Bertomeu, J., Andreu Batallé, Jordi, Alcubilla, R. Thin film transistors obtained by hot wire CVD. "Journal of non-crystalline solids", Maig 2000, vol. 266, núm. 269, p. 1304-1309.
Paraules clau
E130, N100, T190
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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