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Fabrication and characterization of in-situ doped a-Si0.8C0.2 emitter bipolar transistors

Autor
Orpella, A.; Puigdollers, J.; Bardes, D.; Alcubilla, R.; Marsal, L.; Pallarès, J.
Tipus d'activitat
Article en revista
Revista
Solid-state electronics
Data de publicació
2000-09
Volum
44
Número
9
Pàgina inicial
1543
Pàgina final
1548
DOI
https://doi.org/10.1016/S0038-1101(00)00121-0 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/112407 Obrir en finestra nova
URL
https://www.sciencedirect.com/science/article/pii/S0038110100001210 Obrir en finestra nova
Resum
Silicon–carbon emitters were deposited by plasma enhanced chemical vapour deposition (PECVD) on a conventional silicon transistor base. The resulting transistors were annealed after the emitter had been deposited which led to the dopant diffusing from the amorphous layer into the crystalline base. This paper analyses the effect of the annealing temperature on the properties of the amorphous layer and on the electrical characteristics of the transistors. First, after isochronal annealing betwee...
Citació
Orpella, A., Puigdollers, J., Bardes, D., Alcubilla, R., Marsal, L., Pallarès, J. Fabrication and characterization of in-situ doped a-Si0.8C0.2 emitter bipolar transistors. "Solid-state electronics", Setembre 2000, vol. 44, núm. 9, p. 1543-1548.
Paraules clau
Annealed Amorphous Silicon–carbon, Bipolar Transistors
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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