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Analysis of bias stress on thin-film transistors obtained by Hot-Wire Chemical Vapour Deposition

Autor
Dosev, D.; Puigdollers, J.; Orpella, A.; Voz, C.; Fonrodona, M.; Soler, D.; Marsal, L.; Pallarès, J.; Bertomeu, J.; Andreu Batallé, Jordi; Alcubilla, R.
Tipus d'activitat
Article en revista
Revista
Thin solid films
Data de publicació
2001-02
Volum
383
Número
1-2
Pàgina inicial
307
Pàgina final
309
DOI
https://doi.org/10.1016/S0040-6090(00)01608-4 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/112408 Obrir en finestra nova
URL
http://www.sciencedirect.com/science/article/pii/S0040609000016084 Obrir en finestra nova
Resum
The stability under gate bias stress of unpassivated thin film transistors was studied by measuring the transfer and output characteristics at different temperatures. The active layer of these devices consisted of in nanocrystalline silicon deposited at 125°C by Hot-Wire Chemical Vapour Deposition. The dependence of the subthreshold activation energy on gate bias for different gate bias stresses is quite different from the one reported for hydrogenated amorphous silicon. This behaviour has been...
Citació
Dosev, D., Puigdollers, J., Orpella, A., Voz, C., Fonrodona, M., Soler, D., Marsal, L., Pallarès, J., Bertomeu, J., Andreu Batallé, Jordi, Alcubilla, R. Analysis of bias stress on thin-film transistors obtained by Hot-Wire Chemical Vapour Deposition. "Thin solid films", Febrer 2001, vol. 383, núm. 1-2, p. 307-309.
Paraules clau
HWCVD, Nanocrystalline silicon, Stability, TFT
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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