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Annealing effects on the conduction mechanisms of p+ -amorphous- Si0.8C0.2:H/n-crystalline- Si diodes

Autor
Marsal, L.; Martin, I.; Pallares, J.; Orpella, A.; Alcubilla, R.
Tipus d'activitat
Article en revista
Revista
Journal of applied physics
Data de publicació
2003-08
Volum
94
Número
4
Pàgina inicial
2622
Pàgina final
2626
DOI
https://doi.org/10.1063/1.1591073 Obrir en finestra nova
URL
http://aip.scitation.org/doi/pdf/10.1063/1.1591073 Obrir en finestra nova
Resum
+-type hydrogenated amorphous silicon–carbon (a-Si1-xCx:H) on n-type crystalline silicon (c-Si) heterojunction diodes were fabricated and characterized electrically. The effects of thermal annealing on the electrical transport properties of a-Si0.8C0.2:H/c-Si diodes were investigated by measuring their current–voltage characteristics. From the dark current–voltage characteristics measured at different temperatures (298–373 K), transport mechanisms were analyzed in detail. Two carrier tra...
Paraules clau
Annealing, Charged currents, Electric measurements, Space charge effects, Temperature measurement
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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