Carregant...
Carregant...

Vés al contingut (premeu Retorn)

Pentacene thin-film transistors on polymeric gate dielectric: device fabrication and electrical characterization

Autor
Puigdollers, J.; Voz, C.; Martin, I.; Orpella, A.; Vetter, M.; Alcubilla, R.
Tipus d'activitat
Article en revista
Revista
Journal of non-crystalline solids
Data de publicació
2004-06
Volum
338-340
Pàgina inicial
617
Pàgina final
621
DOI
https://doi.org/10.1016/j.jnoncrysol.2004.03.054 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/113072 Obrir en finestra nova
URL
https://www.sciencedirect.com/science/article/pii/S0022309304002236 Obrir en finestra nova
Resum
Pentacene thin-film transistors using polymethyl methacrylate as a gate dielectric have been fabricated. A bottom gate, inverted staggered structure was selected to study the influence of the dielectric on the device performance. Crystalline silicon wafers and polyethylenenaphtalate polymer foils were used as substrates. Pentacene thin-films were deposited by thermal evaporation in a high-vacuum system. The maximum process temperature was 170 °C, corresponding to the baking of polymethyl methac...
Paraules clau
T110, F100, D180
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

Participants