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Optoelectronic devices based on evaporated pentacene films

Autor
Voz, C.; Puigdollers, J.; Martin, I.; Muñoz, D.; Orpella, A.; Vetter, M.; Alcubilla, R.
Tipus d'activitat
Article en revista
Revista
Solar energy materials and solar cells
Data de publicació
2005-01
Volum
87
Número
1-4
Pàgina inicial
567
Pàgina final
573
DOI
https://doi.org/10.1016/j.solmat.2004.07.039 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/113362 Obrir en finestra nova
URL
https://www.sciencedirect.com/science/article/pii/S0927024804003745 Obrir en finestra nova
Resum
Aluminium/pentacene Schottky diodes have been fabricated on glass substrates. An ohmic, transparent front contact was prepared by sputtering a highly conductive indium–tin-oxide layer. The pentacene layer was evaporated in high vacuum of a pure (98%) commercially available source. All the samples were grown at room temperature and moderate deposition rates (<10 Å/s). Optical measurements evidence absorption peaks at energy positions 1.86, 1.97, 2.13, 2.3 and 2.5 eV, corresponding to singlet s...
Citació
Voz, C., Puigdollers, J., Martin, I., Muñoz, D., Orpella, A., Vetter, M., Alcubilla, R. Optoelectronic devices based on evaporated pentacene films. "Solar energy materials and solar cells", Gener 2005, vol. 87, núm. 1-4, p. 567-573.
Paraules clau
Excitons, Pentacene, Schottky diode
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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