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Phosphorus-diffused silicon solar cell emitters with plasma enhanced chemical vapor deposited silicon carbide

Autor
Orpella, A.; Vetter, M.; Ferre, R.; Martin, I.; Puigdollers, J.; Voz, C.; Alcubilla, R.
Tipus d'activitat
Article en revista
Revista
Solar energy materials and solar cells
Data de publicació
2005-01
Volum
87
Número
1-4
Pàgina inicial
667
Pàgina final
674
DOI
https://doi.org/10.1016/j.solmat.2004.08.021 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/113361 Obrir en finestra nova
URL
https://www.sciencedirect.com/science/article/pii/S0927024804003848 Obrir en finestra nova
Resum
We propose the use of annealed phosphorus doped amorphous silicon carbide layers (a-SiC:H(n)) deposited by PECVD as emitters in solar cells and explore the effect of the annealing time on the emitter saturation current density (). We use the quasy-steady state photoconductance method to determine the dependence of effective lifetime on excess carrier density and from these measurements we obtain values in the range of 300 fA cm-2 for sheet resistances around 100 O¿sq. Finally, we obtain effecti...
Citació
Orpella, A., Vetter, M., Ferre, R., Martin, I., Puigdollers, J., Voz, C., Alcubilla, R. Phosphorus-diffused silicon solar cell emitters with plasma enhanced chemical vapor deposited silicon carbide. "Solar energy materials and solar cells", Gener 2005, vol. 87, núm. 1-4, p. 667-674.
Paraules clau
Amorphous silicon carbide (a-SIC:H(n)), Emitter saturation current density, Passivation, Solar cells
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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