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Crystalline Silicon surface passivation with amorphous SiCx:H films deposited by Plasma- Enhanced Chemical Vapor Deposition

Autor
Martin, I.; Vetter, M.; Garin, M.; Orpella, A.; Voz, C.; Puigdollers, J.; Alcubilla, R.
Tipus d'activitat
Article en revista
Revista
Journal of applied physics
Data de publicació
2005-12
Volum
98
Número
11
Pàgina inicial
114192
Pàgina final
(1-10)
DOI
https://doi.org/10.1063/1.2140867 Obrir en finestra nova
URL
http://scitation.aip.org/content/aip/journal/jap/98/11/10.1063/1.2140867 Obrir en finestra nova
Resum
Surface-passivating properties of hydrogenated amorphous silicon carbide films(a-SiCx:H)(a-SiCx:H)deposited by plasma-enhanced chemical-vapor deposition on both pp- and nn-type crystalline silicon(c-Si)(c-Si) have been extensively studied by our research group in previous publications. We characterized surface recombination by measuring the dependence of the effective lifetime (teff)(teff) on excess carrier density(¿n)(¿n) through quasi-steady-state photoconductance technique. Additionally, we...
Paraules clau
Thin Films, Surface Passivation, Lifetime
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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