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Copper phthalocyanine thin filma transistors with polymeric gate dielectric

Autor
Puigdollers, J.; Voz, C.; Fonrodona, M.; Cheylan, S.; Stella, M.; Andreu Batallé, Jordi; Vetter, M.; Alcubilla, R.
Tipus d'activitat
Article en revista
Revista
Journal of non-crystalline solids
Data de publicació
2006-06
Volum
352
Número
9-20
Pàgina inicial
1778
Pàgina final
1782
DOI
https://doi.org/10.1016/j.jnoncrysol.2005.10.063 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/117870 Obrir en finestra nova
URL
https://www.sciencedirect.com/science/article/pii/S0022309306002079 Obrir en finestra nova
Resum
Copper phthalocyanine (CuPc) thin-film transistors have been fabricated using polymethyl methacrylate (PMMA) as gate dielectric. A bottom gate, staggered structure was selected to study the device performance. CuPc thin-films were deposited by thermal evaporation in a high vacuum system. The maximum process temperature achieved was 100 °C, corresponding to the baking of the PMMA. The devices showed satisfactory p-type electrical characteristics with field-effect mobility and threshold voltage v...
Paraules clau
Polymers and organics, Thin film transistors
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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