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Very low surface recombination velocity of crystalline silicon passivated by phosphorus-doped a-SiCxNy:H(n) alloys

Autor
Ferre, R.; Orpella, A.; Muñoz, D.; Martin, I.; Recart, F.; Voz, C.; Puigdollers, J.; Cabarrocas, R.; Alcubilla, R.
Tipus d'activitat
Article en revista
Revista
Progress in photovoltaics
Data de publicació
2008-03
Volum
16
Número
2
Pàgina inicial
123
Pàgina final
127
DOI
https://doi.org/10.1002/pip.802 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/118025 Obrir en finestra nova
URL
https://onlinelibrary.wiley.com/doi/abs/10.1002/pip.802 Obrir en finestra nova
Resum
Hydrogenated and phosphorus-doped amorphous silicon carbonitride films (a-SiCxNy:H(n)) were deposited by plasma-enhanced chemical vapor deposition (PECVD) on crystalline silicon surface in order to explore surface passivation properties. Very silicon-rich films yielded effective surface recombination velocities at 1 sun-illumination as low as 3¿cm¿s-1 and 2¿cm¿s-1 on 1¿O¿cm p- and n-type crystalline silicon substrates, respectively. In order to use them as anti-reflection coating, we incre...
Paraules clau
Amorphous silicon, Antireflective, Crystalline solar cells, Passivation, Phosphorus doped, Silicon carbide, Thermal stress
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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