Carregant...
Carregant...

Vés al contingut (premeu Retorn)

Characterization and application of a-SiCx:H films for the passivation of the c-Si surface

Autor
Martin, I.; Vetter, M.; Orpella, A.; Puigdollers, J.; Voz, C.; Marsal, L.; Pallarès, J.; Alcubilla, R.
Tipus d'activitat
Article en revista
Revista
Thin solid films
Data de publicació
2002-01
Volum
403-404
Pàgina inicial
476
Pàgina final
479
DOI
https://doi.org/10.1016/S0040-6090(01)01648-0 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/112873 Obrir en finestra nova
URL
http://www.sciencedirect.com/science/article/pii/S0040609001016480 Obrir en finestra nova
Resum
In this work we investigate the effects of typical thermal treatments on c-Si surface passivation by intrinsic a-SiCx:H films. First, a forming gas anneal (FGA), (400 °C, 30 min in H2/N2) is applied resulting in an improvement in surface passivation. The best result is a surface recombination velocity lower than 23 cm s-1. A second thermal step (730 °C, 30 s) is studied to try and simulate the firing step for screen-printed contacts. This annealing has no effect in surface passivation indicati...
Citació
Martin, I., Vetter, M., Orpella, A., Puigdollers, J., Voz, C., Marsal, L., Pallarès, J., Alcubilla, R. Characterization and application of a-SiCx:H films for the passivation of the c-Si surface. "Thin solid films", Gener 2002, vol. 403-404, p. 476-479.
Paraules clau
Amorphous semiconductors, Solar cells, Surface passivation
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

Participants