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A new approach to modelling the impact of EMI on MOSFET DC behavior

Autor
Fernandez-Garcia, R.; Gil, I.; Boyer, A.; BenDhia, S.; Vrignon, B.
Tipus d'activitat
Article en revista
Revista
IEICE transactions on electronics
Data de publicació
2011-12-12
Volum
E94-C
Número
12
Pàgina inicial
1906
Pàgina final
1908
DOI
https://doi.org/10.1587/transele.E94.C.1906 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/14375 Obrir en finestra nova
URL
http://search.ieice.org/bin/summary.php?id=e94-c_12_1906&category=C&year=2011&lang=E&abst= Obrir en finestra nova
Resum
A simple analytical model to predict the DC MOSFET behavior under electromagnetic interference (EMI) is presented. The model is able to describe the MOSFET performance in the linear and saturation regions under EMI disturbance applied to the gate. The model consists of a unique simple equivalent circuit based on a voltage dependent current source and a reduced number of parameters which can accurately predict the drift on the drain current due to the EMI source. The analytical approach has been ...
Citació
Fernandez, R. [et al.]. A new approach to modelling the impact of EMI on MOSFET DC behavior. "IEICE transactions on electronics", 12 Desembre 2011, vol. E94-C, núm. 12, p. 1906-1908.
Grup de recerca
RFEMC - Grup de Radiofreqüència i Compatibilitat Electromagnètica en Xarxes de Comunicacions

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