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Evidence of intrinsic ambipolar charge transport in a high band gap organic semiconductor

Autor
Moreno, C.; Pfattner, R.; Mas, M.; Puigdollers, J.; Bromley, S.; Rovira, C.; Alcubilla, R.; Veciana, J.
Tipus d'activitat
Article en revista
Revista
Journal of materials chemistry B
Data de publicació
2011-11-16
Volum
22
Pàgina inicial
345
Pàgina final
348
DOI
https://doi.org/10.1039/C1JM15037E Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/14665 Obrir en finestra nova
Resum
Theoretical and experimental investigations combining in situ Kelvin probe microscopy (KPM) and macroscopic electrical studies are employed to explore the intrinsic transport in dithiophene-tetrathiafulvalene (DT-TTF) single crystal organic field-effect transistors. Our work demonstrates that ambipolar behavior is not restricted only to materials possessing a high electron affinity and thus may be a more general phenomenon.
Citació
Moreno, C. [et al.]. Evidence of intrinsic ambipolar charge transport in a high band gap organic semiconductor. "Journal of Material Chemistry", 16 Novembre 2011, vol. 22, p. 345-348.
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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