We appreciate the careful analysis and comments by Frégonèse and Zimmer, where they show that the model proposed, accurately reproduces experimental data from graphene FETs (GFETs) when an appropriate smoothing factor is used. The authors have proposed an extension of this model by Frégonèse et al. with an exact calculation of a denominator. We compared the model extension with the original work. Unfortunately, we did not use a suitable smoothing factor in our comparison, which lead to a strong artifact in the calculations and was absent in the exact solution. Following the argument, the authors agree with our colleagues that there is no artifact at the Dirac point in their GFET compact-model when a proper smoothing factor is used. We were not aware of the requirement of such a factor in specific cases when implementing the model because it is not mentioned; therefore, we apologize for misrepresenting their work.
Iannazzo, M.; Lo Muzzo, V.; Rodriguez, S.; Pandey, H.; Rusu, A.; Lemme, M.; Alarcon, E. IEEE transactions on electron devices Vol. 62, num. 11, p. 3870-3875 DOI: 10.1109/TED.2015.2479036 Data de publicació: 2015-11-01 Article en revista
An optimization of the current-to-voltage transfer characteristic of a graphene FET (GFET) compact model, based on drift-diffusion carrier transport, is presented. The improved accuracy at Dirac point extends the model usability for GFETs when scaling parameters, such as voltage supply, gate length, oxide thickness, and mobility, for circuit design exploration. The model's accuracy is demonstrated through fitting to GFETs processed in-house. The model has been written in a standard behavioral language, and extensively run in an analog circuit simulator for designing basic circuits, such as inverters and cascode cells, demonstrating its robustness.