Loading...
Loading...

Go to the content (press return)

Impact of positive bias temperature instability (PBTI) on 3T1D-DRAM cells

Author
Aymerich, N.; Ganapathy, S.; Rubio, A.; Canal, R.; Gonzalez, A.
Type of activity
Journal article
Journal
Integration. The VLSI journal
Date of publication
2012-06
Volume
45
Number
3
First page
246
Last page
252
DOI
https://doi.org/10.1016/j.vlsi.2011.11.014 Open in new window
URL
http://dl.acm.org/citation.cfm?id=2210829.2210980&coll=DL&dl=GUIDE Open in new window
Abstract
Memory circuits are playing a key role in complex multicore systems with both data and instructions storage and mailbox communication functions. There is a general concern that conventional SRAM cell based on the 6T structure could exhibit serious limitations in future CMOS technologies due to the instability caused by transistor mismatching as well as for leakage consumption reasons. For L1 data caches the new cell 3T1D DRAM is considered a potential candidate to substitute 6T SRAMs. We first e...
Keywords
3T1D-DRAM, 6T-SRAM, Device degradation, PBTI
Group of research
ARCO - Microarchitecture and Compilers
HIPICS - High Performance Integrated Circuits and Systems
VIRTUOS - Virtualisation and Operating Systems

Participants