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Laser processing of Al2O3/a-SiCx:H stacks: a feasible solution for the rear surface of high-efficiency p-type c-Si solar cells

Autor
Martin, I.; Ortega, P.; Colina, M.A.; Orpella, A.; López, G.; Alcubilla, R.
Tipus d'activitat
Article en revista
Revista
Progress in photovoltaics
Data de publicació
2013-08
Volum
21
Número
5
Pàgina inicial
1171
Pàgina final
1175
DOI
https://doi.org/10.1002/pip.2207 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/16135 Obrir en finestra nova
Resum
We explore the potential of laser processing aluminium oxide (Al 2O3)/amorphous silicon carbide (a-SiCx:H) stacks to be used at the rear surface of p-type crystalline silicon (c-Si) solar cells. For this stack, excellent quality surface passivation is measured with effective surface recombination velocities as low as 2 cm/s. By means of an infrared laser, the dielectric film is locally opened. Simultaneously, part of the aluminium in the Al2O3 film is introduced into the c-Si, creating p+ region...
Citació
Martin, I. [et al.]. Laser processing of Al2O3/a-SiCx:H stacks: a feasible solution for the rear surface of high-efficiency p-type c-Si solar cells. "Progress in photovoltaics", 26 Abril 2012, vol. 20, núm. 4, p. 1-5.
Paraules clau
c-Si surface passivation high efficiency laser-processed p+ regions point contacts Crystalline silicons Feasible solution High-efficiency solar cells Quality surfaces Recombination velocity Surface passivation Surface recombination velocities Aluminum Amorphous silicon Copyrights Dielectric films Efficiency Electric contactors Infrared lasers Ohmic contacts Point contacts Silicon carbide Solar cells Velocity Silicon
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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