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Variability and reliability analysis of CNFET in the presence of carbon nanotube density fluctuation

Author
Garcia, C.; Rubio, A.
Type of activity
Presentation of work at congresses
Name of edition
19th International Conference Mixed Design of Integrated Circuits and Systems
Date of publication
2012
Presentation's date
2012-05
Book of congress proceedings
Proceedings of the 19th International Conference Mixed Design of Integrated Circuits and Systems: MIXDES 2012: Warsaw, Poland, 24-26 May, 2012
First page
124
Last page
129
Publisher
IEEE Press. Institute of Electrical and Electronics Engineers
Repository
http://hdl.handle.net/2117/16298 Open in new window
URL
http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6226286 Open in new window
Abstract
Current carbon nanotube (CNT) synthesis processes are not perfect. One of the most critical issue is the presence of density variations in CNT growth. These variations are due to the lack of precise control of CNT location during the synthesis and the presence of metallic CNTs (m-CNTs). In this work we analyze the impact of CNT density fluctuations on carbon nanotube field effect transistor (CNFET) performance. A CNFET reliability analysis is also presented because of CNT density variations can ...
Citation
García, C.; Rubio, J.A. Variability and reliability analysis of CNFET in the presence of carbon nanotube density fluctuation. A: Mixed Design of Integrated Circuits and Systems. "Proceedings of the 19th International Conference". Warsaw: IEEE Press. Institute of Electrical and Electronics Engineers, 2012, p. 124-129.
Group of research
HIPICS - High Performance Integrated Circuits and Systems

Participants