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Process variability-aware proactive reconfiguration techniques for mitigating aging effects in nano scale SRAM lifetime

Autor
Rubio, A.; Amat, Esteve; Pouyan, P.
Tipus d'activitat
Presentació treball a congrés
Nom de l'edició
IEEE 30th VLSI Test Symposium
Any de l'edició
2012
Data de presentació
2012-06
Llibre d'actes
IEEE VTS'12 (30th VLSI Test Symposium), 23rd - 26th April 2012, Hawaii, USA
Pàgina inicial
240
Pàgina final
245
Editor
IEEE Press. Institute of Electrical and Electronics Engineers
Repositori
http://hdl.handle.net/2117/16582 Obrir en finestra nova
URL
http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6231060 Obrir en finestra nova
Resum
Process variations and device aging have a significant impact on the reliability and performance of nano scale integrated circuits. Proactive reconfiguration is an emerging technique to extend the lifetime of embedded SRAM memories. This work introduces a novel version that modifies and enhances the advantages of this method by considering the process variability impact on the memory components. Our results show between 30% and 45% SRAM lifetime increases over the existing proactive reconfigurat...
Citació
Rubio, J.A.; Amat, E.; Pouyan, P. Process variability-aware proactive reconfiguration techniques for mitigating aging effects in nano scale SRAM lifetime. A: VLSI Test Symposium. "Proceedings of the VLSI Test Symposium". Hawaii: IEEE Press. Institute of Electrical and Electronics Engineers, 2012, p. 240-245.
Grup de recerca
HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions

Participants