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On line monitoring of RF power amplifiers with embedded temperature sensors

Autor
Altet, J.; Mateo, D.; Gómez, D.
Tipus d'activitat
Presentació treball a congrés
Nom de l'edició
18th IEEE International On-Line Testing Symposium
Any de l'edició
2012
Data de presentació
2012-06-29
Llibre d'actes
Proceedings of the 2012 IEEE 18th International On-Line Testing Symposium (IOLTS): 27-29 June 2012, Sitges, Spain
Pàgina inicial
1
Pàgina final
5
Editor
IEEE
Repositori
http://hdl.handle.net/2117/16657 Obrir en finestra nova
Resum
In the present paper we analyze that DC temperature measurements of the silicon surface can be used to monitor the high frequency status and performances of class A RF Power Amplifiers. As a proof of concept, we present experimental results obtained with a 65 nm CMOS IC that contains a 2GHz linear class A Power Amplifier and a very simple differential temperature sensor. Results show that the PA output power can be tracked from DC temperature measurements.
Citació
Altet, J.; Mateo, D.; Gómez, D. On line monitoring of RF power amplifiers with embedded temperature sensors. A: IEEE International On-Line Testing Symposium. "2012 IEEE 18th International On-Line Testing Symposium (IOLTS), Sitges, Spain, June 27-29, 2012". Sitges, Barcelona: IEEE, 2012, p. 1-5.
Grup de recerca
HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions

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