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Electro-thermal coupling analysis methodology for RF circuits

Autor
Gómez, D.; Dufis, C.; Altet, J.; Mateo, D.; Gonzalez, J.
Tipus d'activitat
Article en revista
Revista
Microelectronics journal
Data de publicació
2012-09
Volum
43
Número
9
Pàgina inicial
633
Pàgina final
641
DOI
https://doi.org/10.1016/j.mejo.2011.04.011 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/117438 Obrir en finestra nova
URL
https://www.sciencedirect.com/science/article/pii/S0026269211000917 Obrir en finestra nova
Resum
In this paper an electro-thermal co-simulation methodology suitable for RF circuits is presented. It circumvents traditional transient simulation drawbacks that arise when signals or magnitudes whose frequencies are separated orders of magnitude are present simultaneously in the simulated circuit. The accuracy of the proposed technique is verified experimentally by comparing simulation and measurements of the thermal coupling between an integrated power amplifier (PA) and a differential temperat...
Citació
Gómez, D., Dufis, C., Altet, J., Mateo, D., Gonzalez, J. Electro-thermal coupling analysis methodology for RF circuits. "Microelectronics journal", Setembre 2012, vol. 43, núm. 9, p. 633-641.
Paraules clau
CAD tools, CMOS, Electro-thermal co-simulation, RFIC, Thermal coupling simulation
Grup de recerca
HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions

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