In this paper we demonstrate that the steady state temperature increase due to the power dissipated by the circuit under test can be used as observable to test the gain of a 2GHz linear class A Power Amplifier. As a proof of concept, we use two strategies to monitor the temperature: a temperature sensor embedded within the same silicon die, which can be used for a BIST approach, and an Infra Red camera, with applications to failure analysis and product debugging.
Altet, J. [et al.]. DC temperature measurements for power gain monitoring in RF power amplifiers. A: IEEE International Test Conference. "2012 IEEE International Test Conference (ITC)". Anaheim, CA: IEEE, 2012, p. 1-8.