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DC temperature measurements for power gain monitoring in RF power amplifiers

Autor
Altet, J.; Mateo, D.; Gómez, D.; Perpiñà, X.; Jordà, X.
Tipus d'activitat
Presentació treball a congrés
Nom de l'edició
2012 ITC - IEEE International Test Conference
Any de l'edició
2012
Data de presentació
2012-11-05
Llibre d'actes
2012 IEEE International Test Conference (ITC)
Pàgina inicial
1
Pàgina final
8
Editor
IEEE
DOI
https://doi.org/10.1109/TEST.2012.6401589 Obrir en finestra nova
Projecte finançador
TEC2008-01856 PRINCIPIOS DE DISEÑO Y TEST DE SISTEMAS INTEGRADOS EN TERA-ESCALA
Repositori
http://hdl.handle.net/2117/17832 Obrir en finestra nova
URL
http://ieeexplore.ieee.org/xpl/login.jsp?tp=&arnumber=6401589&url=http%3A%2F%2Fieeexplore.ieee.org%2Fxpls%2Fabs_all.jsp%3Farnumber%3D6401589 Obrir en finestra nova
Resum
In this paper we demonstrate that the steady state temperature increase due to the power dissipated by the circuit under test can be used as observable to test the gain of a 2GHz linear class A Power Amplifier. As a proof of concept, we use two strategies to monitor the temperature: a temperature sensor embedded within the same silicon die, which can be used for a BIST approach, and an Infra Red camera, with applications to failure analysis and product debugging.
Citació
Altet, J. [et al.]. DC temperature measurements for power gain monitoring in RF power amplifiers. A: IEEE International Test Conference. "2012 IEEE International Test Conference (ITC)". Anaheim, CA: IEEE, 2012, p. 1-8.
Paraules clau
DC temperature measurement RF power amplifiers circuit under test failure analysis infrared camera power dissipated power gain monitoring product debugging silicon die steady state temperature temperature sensor
Grup de recerca
HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions

Participants