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Carbon nanotube FET process variability and noise model for radiofrequency investigations

Autor
Landauer, G.M.; Gonzalez, J.
Tipus d'activitat
Presentació treball a congrés
Nom de l'edició
2012 IEEE International Conference on Nanotechnology
Any de l'edició
2012
Data de presentació
2012
Llibre d'actes
2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO 2012)
Pàgina inicial
1
Pàgina final
5
Editor
Institute of Electrical and Electronics Engineers (IEEE)
Repositori
http://hdl.handle.net/2117/19701 Obrir en finestra nova
URL
http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6321963 Obrir en finestra nova
Resum
This work focuses on process variability and noise in carbon nanotube field-effect transistors (CNFET) to obtain a compact model usable for radiofrequency (RF) design and simulations. CNFET figures of merit (FoM) are determined and compared to International Technology Roadmap for Semiconductors (ITRS) requirements on conventional analog silicon-based devices. The developed model is also used to investigate on the impact of manufacturing process variability on the CNFET's RF-performance and noise...
Citació
Landauer, G.M.; Gonzalez, J. Carbon nanotube FET process variability and noise model for radiofrequency investigations. A: IEEE International Conference on Nanotechnology. "2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO 2012)". Birmingham: Institute of Electrical and Electronics Engineers (IEEE), 2012, p. 1-5.
Paraules clau
COMPACT SPICE MODEL, PART II, PERFORMANCE, TRANSISTORS INCLUDING NONIDEALITIES
Grup de recerca
HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions

Participants

  • Landauer, Gerhard Martin  (autor ponent)
  • Gonzalez Jimenez, Jose Luis  (autor ponent)