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Carbon nanotube FET process variability and noise model for radiofrequency investigations

Author
Landauer, G.M.; Gonzalez, J.
Type of activity
Presentation of work at congresses
Name of edition
2012 IEEE International Conference on Nanotechnology
Date of publication
2012
Presentation's date
2012
Book of congress proceedings
2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO 2012)
First page
1
Last page
5
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Repository
http://hdl.handle.net/2117/19701 Open in new window
URL
http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6321963 Open in new window
Abstract
This work focuses on process variability and noise in carbon nanotube field-effect transistors (CNFET) to obtain a compact model usable for radiofrequency (RF) design and simulations. CNFET figures of merit (FoM) are determined and compared to International Technology Roadmap for Semiconductors (ITRS) requirements on conventional analog silicon-based devices. The developed model is also used to investigate on the impact of manufacturing process variability on the CNFET's RF-performance and noise...
Citation
Landauer, G.M.; Gonzalez, J. Carbon nanotube FET process variability and noise model for radiofrequency investigations. A: IEEE International Conference on Nanotechnology. "2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO 2012)". Birmingham: Institute of Electrical and Electronics Engineers (IEEE), 2012, p. 1-5.
Keywords
COMPACT SPICE MODEL, PART II, PERFORMANCE, TRANSISTORS INCLUDING NONIDEALITIES
Group of research
HIPICS - High Performance Integrated Circuits and Systems

Participants

  • Landauer, Gerhard Martin  (author and speaker )
  • Gonzalez Jimenez, Jose Luis  (author and speaker )