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Optical and compositional characterization of GaAs(Ti) thin films deposited by R.F. magnetron sputtering

Author
Boronat, A.; Silvestre, S.; Castañer, L.
Type of activity
Journal article
Journal
Journal of non-crystalline solids
Date of publication
2013-01
Volume
359
Number
1
First page
21
Last page
26
DOI
https://doi.org/10.1016/j.jnoncrysol.2012.09.017 Open in new window
Repository
http://hdl.handle.net/2117/19895 Open in new window
URL
http://www.sciencedirect.com/science/article/pii/S0022309312005637 Open in new window
Abstract
GaAs thin films with Ti incorporated, to which we refer to as GaAs(Ti), have been deposited by R.F. sputtering on fused silica and c-GaAs substrates under different process conditions. The films were characterized by EPMA, XPS and XRD to study the composition and structural dependence on the deposition conditions, paying special attention on the Ti content of the films. The optical responses of the films were analyzed by spectrofotometric, PDS and FTIR measurements. The Ti content is in all the ...
Citation
Boronat, A.; Silvestre, S.; Castañer, L. Optical and compositional characterization of GaAs(Ti) thin films deposited by R.F. magnetron sputtering. "Journal of non-crystalline solids", Gener 2013, vol. 359, núm. 1, p. 21-26.
Keywords
GaAs(Ti), Intermediate band (IB), Sputtering
Group of research
MNT - Micro and Nanotechnologies Research Group

Participants