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Low recombination n+ regions created by n+ c-Si epitaxial layers and laser processing of phosphorus-doped SiCx films

Author
Martin, I.; Colina, M.A.; Orpella, A.; Voz, C.; De Vecchi, S.; Desrues, T.; Abolmasov, S.; Roca, P.; Alcubilla, R.
Type of activity
Presentation of work at congresses
Name of edition
27th European Photovoltaic Solar Energy Conference and Exhibition
Date of publication
2012
Presentation's date
2012-09
Book of congress proceedings
27th European Photovoltaic Solar Energy Conference and Exhibition: proceedings
First page
1519
Last page
1523
Repository
http://hdl.handle.net/2117/17662 Open in new window
Citation
Martin, I. [et al.]. Low recombination n+ regions created by n+ c-Si epitaxial layers and laser processing of phosphorus-doped SiCx films. A: European Photovoltaic Solar Energy Conference and Exhibition. "27th European Photovoltaic Solar Energy Conference and Exhibition: proceedings". Frankfurt: 2012, p. 1519-1523.
Group of research
MNT - Micro and Nanotechnologies Research Group

Participants