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Efficiency determination of RF linear power amplifiers by steady-state temperature monitoring using built-in sensors

Author
Altet, J.; Gómez, D.; Perpinyà, X.; Mateo, D.; Gonzalez, J.; Vellvehi, M.; Jordà, X.
Type of activity
Journal article
Journal
Sensors and actuators A. Physical
Date of publication
2013-04
Volume
192
First page
49
Last page
57
DOI
https://doi.org/10.1016/j.sna.2012.12.010 Open in new window
Repository
http://hdl.handle.net/2117/19926 Open in new window
URL
http://www.sciencedirect.com/science/article/pii/S0924424712007388 Open in new window
Abstract
This work aims at showing a new approach for determining the efficiency of linear class A RF power amplifiers by means of non-invasive, steady-state thermal monitoring. The theoretical basis of the technique is indicated and its suitability in a real case application scenario is presented. More in detail, silicon surface thermal monitoring is performed with built-in sensors and infrared measurements on an RF power amplifier. The first monitoring circuit consists of differential sensors, which ca...
Citation
Altet, J. [et al.]. Efficiency determination of RF linear power amplifiers by steady-state temperature monitoring using built-in sensors. "Sensors and actuators A. Physical", Abril 2013, vol. 192, p. 49-57.
Keywords
CMOS integrated circuits, Characterization of CMOS RF circuits, Temperature measurements in integrated circuits, Temperature sensor design
Group of research
HIPICS - High Performance Integrated Circuits and Systems

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