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A novel variation-tolerant 4T-DRAM cell with enhanced soft-error tolerance

Autor
Ganapathy, S.; Canal, R.; Alexandrescu, D.; Costenaro, E.; Gonzalez, A.; Rubio, A.
Tipus d'activitat
Presentació treball a congrés
Nom de l'edició
XXX IEEE International Conference on Computer Design
Any de l'edició
2012
Data de presentació
2012-10-02
Llibre d'actes
2012 IEEE 30th International Conference on Computer Design (ICCD)
Pàgina inicial
472
Pàgina final
477
Editor
IEEE Computer Society Publications
DOI
https://doi.org/10.1109/ICCD.2012.6378681 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/18176 Obrir en finestra nova
URL
http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6378681&isnumber=6378602 Obrir en finestra nova
Resum
In view of device scaling issues, embedded DRAM (eDRAM) technology is being considered as a strong alternative to conventional SRAM for use in on-chip memories. Memory cells designed using eDRAM technology in addition to being logic-compatible, are variation tolerant and immune to noise present at low supply voltages. However, two major causes of concern are the data retention capability which is worsened by parameter variations leading to frequent data refreshes (resulting in large dynamic powe...
Citació
Ganapathy, S. [et al.]. A novel variation-tolerant 4T-DRAM cell with enhanced soft-error tolerance. A: IEEE International Conference on Computer Design: VLSI in Computers and Processors. "2012 IEEE 30th International Conference on Computer Design (ICCD)". Montreal: IEEE Computer Society Publications, 2012, p. 472-477.
Paraules clau
Device scaling issues, Enhanced soft error tolerance, Memory cells, On-chip memories, SRAM, Variation-tolerant 4T-DRAM cell, eDRAM technology, embedded DRAM
Grup de recerca
ARCO - Microarquitectura i Compiladors
HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
VIRTUOS - Virtualisation and Operating Systems

Participants