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Impact of FinFET technology introduction in the 3T1D-DRAM memory cell

Autor
Amat, Esteve; Garcia, C.; Aymerich, N.; Canal, R.; Rubio, A.
Tipus d'activitat
Article en revista
Revista
IEEE transactions on device and materials reliability
Data de publicació
2013-01-09
Volum
13
Número
1
Pàgina inicial
287
Pàgina final
292
DOI
https://doi.org/10.1109/TDMR.2013.2238542 Obrir en finestra nova
Resum
n this paper, the 3T1D-DRAM cell based on FinFET devices is studied as an alternative to the bulk one. We observe an improvement in its behavior when IG and SG FinFETs are properly mixed, since together they provide a relevant increase in the memory circuit retention time. Moreover, our FinFET cell shows larger variability robustness, better performance at low supply voltage, and higher tolerance to elevated temperatures.
Paraules clau
FinFETs, Fluctuations, Leakage current, Logic gates, Performance evaluation, Random access memory, Robustness
Grup de recerca
HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
VIRTUOS - Virtualisation and Operating Systems

Participants