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Influence of hydrogen on the optical absorption response of GaAs(Ti) films deposited by R.F. sputtering

Author
Boronat, A.; Silvestre, S.; Castañer, L.
Type of activity
Presentation of work at congresses
Name of edition
9th Spanish Conference on Electron Devices
Date of publication
2013
Presentation's date
2013-02
Book of congress proceedings
Proceedings of the 2013 Spanish Conference on Electron Devices: CDE 2013: February 12-14, 2013: Valladolid, Spain
First page
357
Last page
360
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
DOI
https://doi.org/10.1109/CDE.2013.6481416 Open in new window
Repository
http://hdl.handle.net/2117/19501 Open in new window
URL
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?reload=true&arnumber=6481416&contentType=Conference+Publications Open in new window
Abstract
In the present work we have investigated the optical absorption behavior of GaAs(Ti) films deposited by r.f sputtering technique under different H2 partial pressures. In previous work we have already demonstrated the feasibility to obtain GaAs films with high dose of Ti, which we refer to as GaAs(Ti). Any absorption peak, which could be related with the presence of an intermediate band, has been identified. The low Etauc parameter together with a broad Urbach tail of the films make us to suspect...
Citation
Boronat, A.; Silvestre, S.; Castañer, L. Influence of hydrogen on the optical absorption response of GaAs(Ti) films deposited by R.F. sputtering. A: Spanish Conference on Electron Devices. "Proceedings of the 2013 Spanish Conference on Electron Devices: CDE 2013: February 12-14, 2013: Valladolid, Spain". Valladolid: Institute of Electrical and Electronics Engineers (IEEE), 2013, p. 357-360.
Keywords
GaAs(Ti) compound, hydrogen, intermediate band, sputtering
Group of research
MNT - Micro and Nanotechnologies Research Group

Participants