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Reliability study on technology trends beyond 20nm

Author
Amat, Esteve; Calomarde, A.; Rubio, A.
Type of activity
Presentation of work at congresses
Name of edition
20th International Conference Mixed Design of Integrated Circuits and Systems
Date of publication
2013
Presentation's date
2013-06-20
Book of congress proceedings
Mixed design of integrated circuits and systems MIXDES 2013: proceedings of the 20th international conference: Gdynia, Poland: 20-22 June 2013
First page
414
Last page
418
Publisher
Lodz University of Technology
Repository
http://hdl.handle.net/2117/21142 Open in new window
URL
http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6613386 Open in new window
Abstract
In this work, an assessment of different technology trends (planar CMOS, FinFET and III-V MOSFETs) has been carried out in front of some different reliability scenarios (variability and soft errors). The logic circuits based on FinFET devices have presented the best overall behavior, since we have obtained the best performance and variability robustness. Meanwhile, the III-V/Ge-based circuits have shown the best electrical masking in front of soft errors disturbances.
Citation
Amat, E.; Calomarde, A.; Rubio, J.A. Reliability study on technology trends beyond 20nm. A: International Conference Mixed Design of Integrated Circuits and Systems. "Mixed design of integrated circuits and systems MIXDES 2013: proceedings of the 20th international conference: Gdynia, Poland: 20-22 June 2013". Gdynia: Lodz University of Technology, 2013, p. 414-418.
Group of research
HIPICS - High Performance Integrated Circuits and Systems

Participants