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Variability robustness enhancement for 7nm FinFET 3T1D-DRAM cells

Autor
Amat, Esteve; Garcia, C.; Aymerich, N.; Rubio, A.; Canal, R.
Tipus d'activitat
Presentació treball a congrés
Nom de l'edició
IEEE 56th International Midwest Symposium on Circuits and Systems
Any de l'edició
2013
Data de presentació
2013-08-05
Llibre d'actes
Proceedings of the MWSCAS 2013 - 2013 IEEE 56th International Midwest Symposium on Circuits and Systems
Pàgina inicial
81
Pàgina final
84
DOI
https://doi.org/10.1109/MWSCAS.2013.6674590 Obrir en finestra nova
Projecte finançador
Design And Test Principles For Terascale Integrated Systems
URL
http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6674590 Obrir en finestra nova
Resum
3T1D-DRAM cells will still be operative with 7nm FinFETs but their performance is significantly degraded when factoring in variability. In order to improve the cell robustness against device process variation and high environment temperatures, we propose a Dual-VT strategy. Our results show a larger retention time, significant cell spread reduction and reliable behavior up to 100°C.
Grup de recerca
HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
VIRTUOS - Virtualisation and Operating Systems

Participants