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A very low distortion high efficiency class-F power amplifier at 900 MHz.

Author
Gilasgar, M.; Barlabe, A.; Pradell, L.
Type of activity
Presentation of work at congresses
Name of edition
XXVIII Simposium Nacional de la Unión Científica Internacional de Radio
Date of publication
2013
Presentation's date
2013-09-12
Book of congress proceedings
XXVIII Simposium Nacional de la Unión Científica Internacional de Radio : URSI 2013 : Comunicaciones
Project funding
Diseño de tecnologias integradas reconfigurables en banda milimétrica
Repository
http://hdl.handle.net/2117/21032 Open in new window
URL
http://www.ursi2013.org/comunicaciones/docs/60.pdf Open in new window
Abstract
This paper presents a novel class - F power amplifier for mobile applications in which with a proper harmonic tuning structure the need f or an extra fil tering section is eliminated . A class - F power a mplifier employing a GaN HEMT device has been designed, fabricated and measured at 900 MHz . The fabricated circuit achieves a n excel lent harmonic - suppression level and the t otal h armonic distortion is around 1.2% . It overcomes the narrow band performance of class - F power amplifier s, ...
Citation
Gilasgar, M.; Barlabe, A.; Pradell, L. A very low distortion high efficiency class-F power amplifier at 900 MHz.. A: Simposium Nacional de la Unión Científica Internacional de Radio. "XXVIII Simposium Nacional de la Unión Científica Internacional de Radio : URSI 2013 : Comunicaciones". Santiago de Compostela: 2013.
Group of research
RF&MW - Laboratory of RF & microwave systems, devices and materials

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