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Sub-Bandgap external quantum efficiency in Ti implanted Si heterojunction with intrinsic thin layer cells

Author
Silvestre, S.; Boronat, A.; Colina, M.A.; Castañer, L.; Olea, J.; Pastor, D.; DelPrado, A.; Martil, I.; Gonzalez Diaz, G.; Luque, A.; Antolin, E.; Hernandez, E.; Ramiro, I.; Artacho, I.; López, E.; Martí, A.
Type of activity
Journal article
Journal
Japanese journal of applied physics
Date of publication
2013-11
Volume
52
First page
122302-1
Last page
122302-5
DOI
https://doi.org/10.7567/JJAP.52.122302 Open in new window
Repository
http://hdl.handle.net/2117/21236 Open in new window
URL
http://iopscience.iop.org/1347-4065/52/12R/122302 Open in new window
Abstract
In this work we present the manufacturing processes and results obtained from the characterization of heterojunction with intrinsic thin layer solar cells that include a heavily Ti ion implanted Si absorbing layer. The cells exhibit external circuit photocurrent at photon energies well below the Si bandgap. We discuss the origin of this below-bandgap photocurrent and the modifications in the hydrogenated amorphous intrinsic Si layer thickness to increase the open-circuit voltage.
Citation
Silvestre, S. [et al.]. Sub-Bandgap external quantum efficiency in Ti implanted Si heterojunction with intrinsic thin layer cells. "Japanese journal of applied physics", Novembre 2013, vol. 52, p. 122302-1-122302-5.
Group of research
MNT - Micro and Nanotechnologies Research Group

Participants

  • Silvestre Berges, Santiago  (author)
  • Boronat Moreiro, Alfredo  (author)
  • Colina Brito, Monica Alejandra  (author)
  • Castañer Muñoz, Luis Maria  (author)
  • Olea Ariza, Javier  (author)
  • Pastor, David  (author)
  • DelPrado, A.  (author)
  • Martil, Ignacio  (author)
  • Gonzalez Diaz, German  (author)
  • Luque Lopez, Antonio  (author)
  • Antolin, Elisa  (author)
  • Hernandez, Estela  (author)
  • Ramiro, Iñigo  (author)
  • Artacho, Irene  (author)
  • López, Esther  (author)
  • Martí Vega, Antonio  (author)