Loading...
Loading...

Go to the content (press return)

Recovery of indium-tin-oxide/silicon heterojunction solar cells by thermal annealing

Author
Morales, A.; Voz, C.; Colina, M.A.; Lopez, G.; Martin, I.; Ortega, P.; Orpella, A.; Alcubilla, R.
Type of activity
Journal article
Journal
Energy procedia
Date of publication
2014-01-31
Volume
44
First page
3
Last page
9
DOI
https://doi.org/10.1016/j.egypro.2013.12.002 Open in new window
Repository
http://hdl.handle.net/2117/21497 Open in new window
URL
http://www.sciencedirect.com/science/article/pii/S1876610213018158 Open in new window
Abstract
The emitter of silicon heterojunction solar cells consists of very thin hydrogenated amorphous silicon layers deposited at low temperature. The high sheet resistance of this type of emitter requires a transparent conductive oxide layer, which also acts as an effective antireflection coating. The deposition of this front electrode, typically by Sputtering, involves a relatively high energy ion bombardment at the surface that could degrade the emitter quality. The work function of the transparent ...
Citation
Morales, A. [et al.]. Recovery of indium-tin-oxide/silicon heterojunction solar cells by thermal annealing. "Energy procedia", 31 Gener 2014, vol. 44, p. 3-9.
Group of research
MNT - Micro and Nanotechnologies Research Group

Participants