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A compact noise model for carbon nanotube FETs

Author
Landauer, G.M.; Gonzalez, J.
Type of activity
Presentation of work at congresses
Name of edition
2012 International Semiconductor Conference Dresden-Grenoble
Date of publication
2012
Presentation's date
2012-09-24
Book of congress proceedings
2012 International Semiconductor Conference Dresden-Grenoble (ISCDG 2012): Grenoble, France: 24-26 September 2012
First page
53
Last page
56
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
DOI
https://doi.org/10.1109/ISCDG.2012.6359993 Open in new window
Project funding
TERASCALE RELIABLE ADAPTIVE MEMORY SYSTEMS
Repository
http://hdl.handle.net/2117/22161 Open in new window
URL
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6359993 Open in new window
Abstract
This paper focuses on the development of a compact noise model for radiofrequency (RF) carbon nanotube field-effect transistors (CNFET). The noise mechanisms in these devices are discussed and the impact of the different noise sources is analyzed. For the RF-CNFET under investigation a mínimum noise figure NFmin = 0.104 dB at 60 GHz is predicted. Our model is usable with conventional circuit simulators, which provides a basis for further investigations on CNFET-based RF Building blocks.
Citation
Landauer, G.M.; Gonzalez, J. A compact noise model for carbon nanotube FETs. A: International Semiconductor Conference Dresden-Grenoble. "2012 International Semiconductor Conference Dresden-Grenoble (ISCDG 2012): Grenoble, France: 24-26 September 2012". Grenoble: Institute of Electrical and Electronics Engineers (IEEE), 2012, p. 53-56.
Keywords
Analog, Carbon nanotube, Field-effect transistor, Noise modeling, Radio frequency
Group of research
HIPICS - High Performance Integrated Circuits and Systems

Participants

  • Landauer, Gerhard Martin  (author and speaker )
  • Gonzalez Jimenez, Jose Luis  (author and speaker )