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A compact noise model for carbon nanotube FETs

Autor
Landauer, G.M.; Gonzalez, J.
Tipus d'activitat
Presentació treball a congrés
Nom de l'edició
2012 International Semiconductor Conference Dresden-Grenoble
Any de l'edició
2012
Data de presentació
2012-09-24
Llibre d'actes
2012 International Semiconductor Conference Dresden-Grenoble (ISCDG 2012): Grenoble, France: 24-26 September 2012
Pàgina inicial
53
Pàgina final
56
Editor
Institute of Electrical and Electronics Engineers (IEEE)
DOI
https://doi.org/10.1109/ISCDG.2012.6359993 Obrir en finestra nova
Projecte finançador
TERASCALE RELIABLE ADAPTIVE MEMORY SYSTEMS
Repositori
http://hdl.handle.net/2117/22161 Obrir en finestra nova
URL
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6359993 Obrir en finestra nova
Resum
This paper focuses on the development of a compact noise model for radiofrequency (RF) carbon nanotube field-effect transistors (CNFET). The noise mechanisms in these devices are discussed and the impact of the different noise sources is analyzed. For the RF-CNFET under investigation a mínimum noise figure NFmin = 0.104 dB at 60 GHz is predicted. Our model is usable with conventional circuit simulators, which provides a basis for further investigations on CNFET-based RF Building blocks.
Citació
Landauer, G.M.; Gonzalez, J. A compact noise model for carbon nanotube FETs. A: International Semiconductor Conference Dresden-Grenoble. "2012 International Semiconductor Conference Dresden-Grenoble (ISCDG 2012): Grenoble, France: 24-26 September 2012". Grenoble: Institute of Electrical and Electronics Engineers (IEEE), 2012, p. 53-56.
Paraules clau
Analog, Carbon nanotube, Field-effect transistor, Noise modeling, Radio frequency
Grup de recerca
HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions

Participants

  • Landauer, Gerhard Martin  (autor ponent)
  • Gonzalez Jimenez, Jose Luis  (autor ponent)