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Temperature sensors to measure the central frequency and 3 dB bandwidth in mm W power amplifiers

Autor
Altet, J.; Mateo, D.; Gómez, D.; Gonzalez, J.; Martineau, B.; Siligaris, A.; Aragones, X.
Tipus d'activitat
Article en revista
Revista
IEEE microwave and wireless components letters
Data de publicació
2014-04
Volum
24
Número
4
Pàgina inicial
272
Pàgina final
274
DOI
https://doi.org/10.1109/LMWC.2013.2293668 Obrir en finestra nova
Projecte finançador
Design And Test Principles For Terascale Integrated Systems
Repositori
http://hdl.handle.net/2117/23083 Obrir en finestra nova
URL
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6701395 Obrir en finestra nova
Resum
This letter introduces a novel on-chip measurement technique for the determination of the central frequency and 3 dB bandwidth of a 60 GHz power amplifier (PA) by performing low frequency temperature measurements. The temperature sensor is embedded in the same silicon die as the PA, and placed in empty spaces next to it. Results confirm that temperature sensors can be used as functional built-in testers which serve to reduce testing costs and enhance yield as part of self-healing strategies.
Citació
Altet, J. [et al.]. Temperature sensors to measure the central frequency and 3 dB bandwidth in mm W power amplifiers. "IEEE microwave and wireless components letters", Abril 2014, vol. 24, núm. 4, p. 272-274.
Paraules clau
Built-in test, CMOS millimeter wave integrated circuits, design for testability, frequency response, temperature measurement
Grup de recerca
HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions

Participants