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Ultraviolet laser patterning of porous silicon

Author
Vega, F.; Pelaez, R.; Khun, T.; Afonso, C.N.; Recio , G.; Martín, R.
Type of activity
Journal article
Journal
Journal of applied physics
Date of publication
2014-05-14
Volume
115
Number
18
First page
184902-1
Last page
184902-8
DOI
https://doi.org/10.1063/1.4875378 Open in new window
Project funding
Produccion de patrones con haces laser en materiales para aplicaciones biomedicas y fotonicas
Repository
http://hdl.handle.net/2117/24544 Open in new window
URL
http://scitation.aip.org/content/aip/journal/jap/115/18/10.1063/1.4875378 Open in new window
Abstract
This work reports on the fabrication of 1D fringed patterns on nanostructured porous silicon (nanoPS) layers (563, 372, and 290nm thick). The patterns are fabricated by phase-mask laser interference using single pulses of an UV excimer laser (193nm, 20ns pulse duration). The method is a single-step and flexible approach to produce a large variety of patterns formed by alternate regions of almost untransformed nanoPS and regions where its surface has melted and transformed into Si nanoparticles (...
Citation
Vega, F. [et al.]. Ultraviolet laser patterning of porous silicon. "Journal of applied physics", 14 Maig 2014, vol. 115, núm. 18, p. 184902-1-184902-8.
Keywords
Acronym, German Academic Exchange Service, Sponsor: DAAD
Group of research
GOAPI - Applied Optics and Image Processing Group

Participants

  • Vega Lerin, Fidel  (author)
  • Pelaez de Fuentes, Ramon Javier  (author)
  • Khun, Timo  (author)
  • Afonso Rodriguez, Carmen Nieves  (author)
  • Recio Sánchez, Gonzalo  (author)
  • Martín Palma, Raúl José  (author)

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