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SRAM cell stability metric under transient voltage noise

Author
Vatajelu, E. I.; Álvaro Gómez-Pau; Renovell, M.; Figueras, J.
Type of activity
Journal article
Journal
Microelectronics journal
Date of publication
2013-12-20
Volume
45
Number
10
First page
1348
Last page
1353
DOI
https://doi.org/10.1016/j.mejo.2013.11.005 Open in new window
Repository
http://hdl.handle.net/2117/25228 Open in new window
Citation
Vatajelu, E. [et al.]. SRAM cell stability metric under transient voltage noise. "Microelectronics journal", 20 Desembre 2013, vol. 45, núm. 10, p. 1348-1353.
Group of research
CRnE - Barcelona Research Center in Multiscale Science and Engineering
QINE - Low Power Design, Test, Verification and Security ICs

Participants