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Pre-bond testing of weak defects in TSVs

Author
Arumi, D.; Rodriguez-Montanes, R.; Figueras, J.
Type of activity
Presentation of work at congresses
Name of edition
20th IEEE International On-Line Testing Symposium
Date of publication
2014
Presentation's date
2014-07-07
Book of congress proceedings
Proceedings of the 2014 IEEE 20th International On-Line Testing Symposium (IOLTS): 7-9 July 2014, Hotel Cap Roig, Platja d’Aro, Catalunya, Spain
First page
31
Last page
36
DOI
https://doi.org/10.1109/IOLTS.2014.6873668 Open in new window
Project funding
Impacto de la variabilidad en las estrategias de test y diagnóstico de circuitos micro/nanoelectrónicos
URL
http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6873668 Open in new window
Abstract
Through Silicon Vias (TSVs) are critical elements in three dimensional integrated circuits (3-D ICs) and may undergo defects during the fabrication process and also during their life time. The detection of defective TSVs in the earliest process step is of major concern. For this reason, testing TSVs is usually done at different stages of the fabrication process. In fact, effective pre-bond testing is a key factor to prevent stacking yield loss. Extensive research effort has been devoted to devel...
Keywords
Built-in self test, Builtin self tests (BIST), Critical elements, Defects, Different stages, Fabrication process, Integrated circuit interconnects, Particular solution, Probes, Research efforts, Test application time, Testing, Three dimensional integrated circuits, Through silicon vias
Group of research
CRnE - Barcelona Research Center in Multiscale Science and Engineering
QINE - Low Power Design, Test, Verification and Security ICs

Participants